data sheet silicon transistor ne68039 / 2SC4095 microwave low noise amplifier npn silicon epitaxial transistor 4 pins mini mold data sheet document no. p10367ej2v1ds00 (2nd edition) date published march 1997 n description the ne68039 / 2SC4095 is an npn epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from vhf band to uhf band. ne68039 / 2s c4095 features excellent power gain with very low- noise figures. ne68039 / 2SC4095 employs direct nitiride passivated base surfac e process (dnp process) which is a pr oprietary new fabrication technique which provides excellent nois e figures at high curr ent values. this allows ex cellent associated gain and very wide dynam ic range. features ? nf = 1.8 db typ. @ f = 2.0 ghz, v ce = 6 v, i c = 5 ma ? s 21e 2 = 9.5 db typ. @ f = 2.0 ghz, v ce = 6 v, i c = 10 ma absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg 65 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1 v, i c = 0 dc current gain h fe 50 100 250 v ce = 6 v, i c = 10 ma gain bandwidth product f t 10 ghz v ce = 6 v, i c = 10 ma f = 1.0 ghz feed-back capacitance c re 0.25 0.8 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 7.5 9.5 db v ce = 6 v, i c = 10 ma, f = 2.0 ghz maximum available gain mag 12 db v ce = 6 v, i c = 10 ma, f = 2.0 ghz noise figure nf 1.8 3.0 db v ce = 6 v, i c = 5 ma, f = 2.0 ghz h fe classification class r46/rdf * r47/rdg * r48/rdh * marking r46 r47 r48 h fe 50 to 100 80 to 160 125 to 250 * old specification / new specification package dimensions (units: mm) pin connections 1. 2. 3. 4. collector emitter base emitter 5 5 5 5 0 to 0.1 0.8 2.90.2 (1.8) (1.9) 0.950.85 1.1 +0.2 -0.1 0.16 +0.1 -0.06 0.4 4 1 3 2 +0.1 -0.05 2.8 +0.2 -0.3 1.5 +0.2 -0.1 0.6 +0.1 -0.05 0.4 +0.1 -0.05 0.4 +0.1 -0.05 jeita part no.
2 ne68039 / 2SC4095 typical characteristics (t a = 25 c ) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-mw h fe -dc current gain v ce = 6 v i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db 0.06 0.2 0.1 1 1.0 1 2 5 10 20 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 ghz 0 2 4 6 10 12 14 16 18 8 0.2 1 0.5 2 5 10 20 30 0 10 20 30 0.1 0.2 0.5 1.0 2.0 3.0 f-frequency-ghz maximum available gain, insertion gain vs. frequency |s 21e | 2 -insetion gain -db mag-maximum available gain-db v ce = 6 v f c = 10 ma 5 2 10 30 20 1 2 5 10 20 30 i c -collector current-ma gain bandwidth produut vs. collector current f t -gain bandwidth product-mhz v ce = 6 v free air |s 21e | 2 mag v ce = 6 v f = 1.0 ghz f = 2.0 ghz 0.5
3 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 10 v f = 2.0 ghz s- paramete r v c e = 6 . 0 v, i c = 3 . 0 m a, z o = 50 f (mhz) s 1 1 s 1 1 s 2 1 s 2 1 s 1 2 s 1 2 s 2 2 s 2 2 200 400 600 800 1000 1200 1400 1600 1800 2000 0 . 870 0 . 747 0 . 628 0 . 516 0 . 400 0 . 327 0 . 262 0 . 231 0 . 205 0 . 196 24.2 44.6 59.8 75.1 87.7 103. 4 118. 7 135. 5 155. 3 170. 6 9 . 193 7 . 780 7 . 058 5 . 675 5 . 180 4 . 269 3 . 950 3 . 406 3 . 290 2 . 867 155. 6 136. 6 122. 1 109. 4 99.6 89.8 81.7 74.0 66.4 60.8 0 . 031 0 . 040 0 . 064 0 . 066 0 . 090 0 . 084 0 . 106 0 . 105 0 . 126 0 . 124 53.6 66.2 54.7 56.0 49.4 47.9 48.5 42.1 46.4 40.9 0 . 946 0 . 876 0 . 816 0 . 743 0 . 689 0 . 654 0 . 604 0 . 581 0 . 548 0 . 529 12.8 20.7 26.4 30.9 33.0 35.7 37.7 41.5 43.9 47.1 v c e 6 . 0 v, i c = 10. 0 m a, z o = 50 f (mhz) s 1 1 s 1 1 s 2 1 s 2 1 s 1 2 s 1 2 s 2 2 s 2 2 200 400 600 800 1000 1200 1400 1600 1800 2000 0 . 671 0 . 458 0 . 319 . 0239 0 . 172 0 . 149 0 . 131 0 . 132 0 . 150 0 . 163 43.5 68.7 83.7 101. 9 119. 3 141. 4 163. 0 179. 6 160. 0 150. 1 18. 685 12. 702 9 . 895 7 . 275 6 . 261 5 . 038 4 . 597 3 . 927 3 . 743 3 . 233 137. 9 115. 2 102. 8 92.3 85.1 77.4 71.0 64.8 58.8 54.5 0 . 023 0 . 029 0 . 046 0 . 049 0 . 067 0 . 070 0 . 088 0 . 094 0 . 113 0 . 115 52.1 62.2 54.4 63.1 58.6 57.9 56.1 54.0 55.3 50.0 0 . 832 0 . 710 0 . 649 0 . 600 0 . 578 0 . 559 0 . 527 0 . 514 0 . 494 0 . 478 19.0 23.9 26.0 27.5 28.4 30.3 32.5 35.7 38.1 41.6 ne68039 / 2SC4095
4 s-parameter a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 ? 160 ? 150 ? 140 ? 130 ? 120 ? 110 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ?40 ?30 ? 20 ? 10 0 10 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.02 0.48 0.01 0.49 0 0 0.49 0.01 0.48 0.02 0.47 0.03 0.46 0.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.29 0.21 0.28 0.22 0.27 0.23 0.26 0.24 5 2 . 0 5 2 . 0 0.24 0.26 0.23 0.27 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 . 1 ( +jx ???? z o ) 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 0 . 1 0.9 1.4 1.6 rea ct ance component ( r ???? z o ) ne g a t iv e r e a c t a n c e c om p o n e n t p os i t i v e r e a c t a n c e c o m p o n e n t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 ( ? jx ???? z o ) 20 20 0.2 0.4 0.6 0.8 1.0 s 11e , s 22e -freq uency s 21e -freq uency 90 0 30 ?30 60 ?60 180 150 ?150 120 ?120 ?90 4 0 8 12 16 20 s 21e 2ghz 90 0 30 ?30 60 ?60 180 150 ?150 120 ?120 ?90 0.04 0 0.08 0.12 0.16 0.2 s 12e condition v ce = 6 v , i c = 10/3 ma, freq. = 0.2 to 2 ghz (step 200 mhz) condition v ce = 6 v i c = 10/3 ma freq. = 0.2 to 2 ghz (step 200 mhz) s 12e -freq uency condition v ce = 6 v i c = 10/3 ma freq. = 0.2 to 2 ghz (step 200 mhz) 0.2 ghz 0.2 ghz 2 ghz 2 ghz i c = 3 ma i c = 3 ma i c = 10 ma i c = 10 ma i c = 3 ma i c = 3 ma s 11e s 22e i c = 10 ma i c = 10 ma 0.2 ghz 0.2 ghz 2ghz ne68039 / 2SC4095
5 recommended soldering condtitions t he f ollow i ng condit ions ( s ee t able below ) m u st be m e t t hen soldering t his product. p leas e c ons ult w ith our s ales o ffi c e s in c ase o t her soldering proc ess is used, or in c ase soldering is done under different cont ions . types of s urface m ount devic e f or more det ails, ref er t o our doc ument ? s m t m a nua l? ( iei-1207). ne68039 / 2s c4095 l o b m y s s n o i t i d n o c g n i r e d l o s s s e c o r p g n i r e d l o s infrared ray reflow peak package?s surface temperature: 230 c or below, reflow time: 30 seconds or below (210 c or higher), number of ref low proc ess: 1, exposure limit *: none i r30-00-1 5 1 2 : e r u t a r e p m e t e c a f r u s s ? e g a k c a p k a e p s p v c or below, reflow time: 40 seconds or below (200 c or higher), number of ref low proc ess: 1, exposure limit *: none vp15-00-1 wave soldering solder temperature: 260 c or below, f low t ime: 10 s ec onds or below, number of ref low proc ess: 1, exposure limit *: none w s60-00-1 partial heating method terminal temperature: 300 c or below, flow time: 3 seconds or below, ex posure limit *: none * : expos ure limit bef ore s oldering a fter dry -pac k package i s opened. storage c ondit ions: 25 c and relat i v e humidity a t 65 % or less . no te : do not apply more t han a s ingle proc e s s a t onc e , exc ept for ? p art ial heat ing met hod?. ne68039 / 2SC4095
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